参数资料
型号: HX6228TBRT
厂商: Honeywell International Inc.
英文描述: 128K x 8 STATIC RAM-SOI HX6228
中文描述: 128K的× 8静态RAM的绝缘硅HX6228
文件页数: 6/12页
文件大?。?/td> 153K
代理商: HX6228TBRT
HX6228
6
TAVAVR
Address Read Cycle Time
16
25
ns
TAVQV
Address Access Time
15
25
ns
TAXQX
Address Change to Output Invalid Time
12
3
ns
TSLQV
Chip Select Access Time
16
25
ns
TSLQX
Chip Select Output Enable Time
12
5
ns
TSHQZ
Chip Select Output Disable Time
5
10
ns
TEHQV
Chip Enable Access Time
16
25
ns
TEHQX
Chip Enable Output Enable Time
12
5
ns
TELQZ
Chip Enable Output Disable Time
6
10
ns
TGLQV
Output Enable Access Time
4
9
ns
TGLQX
Output Enable Output Enable Time
4
2
ns
TGHQZ
Output Enable Output Disable Time
4
9
ns
READ CYCLE AC TIMING CHARACTERISTICS (1)
(1) Test conditions: input switching levels VIL/VIH=0.5V/VDD-0.5V (CMOS), VIL/VIH=0V/3V (TTL), input rise and fall times <1 ns/V, input and
output timing reference levels shown in the Tester AC Timing Characteristics table, capacitive output loading C
>50 pF, or equivalent
capacitive output loading C
=5 pF for TSHQZ, TELQZ TGHQZ. For C
L
>50 pF, derate access times by 0.02 ns/pF (typical).
(2) Typical operating conditions: VDD=5.0 V, TA=25
°
C, pre-radiation.
(3) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55
°
C to 125
°
C, post total dose at 25
°
C.
Worst Case (3)
HIGH
IMPEDANCE
NCS
NOE
DATA VALID
CE
T
AVAVR
T
AVQV
T
SLQV
T
AXQX
T
SLQX
T
SHQZ
T
EHQX
T
EHQV
T
GLQX
T
GLQV
T
GHQZ
T
ELQZ
ADDRESS
(NWE = high)
DATA OUT
Symbol
Parameter
Typical
(2)
-55 to 125
°
C
Min Max
Units
相关PDF资料
PDF描述
HX6228TBHC 128K x 8 STATIC RAM-SOI HX6228
HX6228TBHT 128K x 8 STATIC RAM-SOI HX6228
HX6228KBFC 128K x 8 STATIC RAM-SOI HX6228
HX6228KBFT 128K x 8 STATIC RAM-SOI HX6228
HX6228KBHC 128K x 8 STATIC RAM-SOI HX6228
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